Ultra-thin SOI vertical bipolar transistors with an inversion collector on thin-buried oxide (BOX) for low substrate-bias operation and methods thereof

ABSTRACT

The present invention provides a “collector-less” silicon-on-insulator (SOI) bipolar junction transistor (BJT) that has no impurity-doped collector. Instead, the inventive vertical SOI BJT uses a back gate-induced, minority carrier inversion layer as the intrinsic collector when it operates. In accordance with the present invention, the SOI substrate is biased such that an inversion layer is formed at the bottom of the base region serving as the collector. The advantage of such a device is its CMOS-like process. Therefore, the integration scheme can be simplified and the manufacturing cost can be significantly reduced. The present invention also provides a method of fabricating BJTs on selected areas of a very thin BOX using a conventional SOI starting wafer with a thick BOX. The reduced BOX thickness underneath the bipolar devices allows for a significantly reduced substrate bias compatible with the CMOS to be applied while maintaining the advantages of a thick BOX underneath the CMOS.

FIELD OF THE INVENTION

The present invention relates to semiconductor devices, and moreparticularly to a vertical bipolar transistor that does not include animpurity-doped collector. Instead, the bipolar transistor of the presentinvention contains a minority carrier inversion layer as the collector.The present invention also provides a method for forming such a verticalbipolar transistor.

BACKGROUND OF THE INVENTION

The semiconductor industry has been seeking more cost effectivesolutions for manufacturing integrated bipolar transistors andcomplementary metal oxide semiconductor (CMOS) devices (hereinafterBi/CMOS) for mass applications of radio frequency (RF)/analog andwireless/fiber-based telecommunications for decades. Si/SiGe BiCMOStechnology is widely used and has been quite successful. However, asCMOS adopts the thin silicon-on-insulator (SOI) substrate for lowerpower and higher speed (due to device scaling), the thick sub-collectorof conventional bipolar junction transistors (BJTs) becomes incompatiblewith the integration of high-performance SOI CMOS devices.

In order to facilitate integration with SOI CMOS, lateral SOI BJTs havebeen proposed and studied. See, for example, S. Parke, et al. “Aversatile, SOI CMOS technology with complementary lateral BJT's”, IEDM,1992, Technical Digest, 13-16 Dec. 1992, page(s) 453-456; V. M. C. Chen,“A low thermal budget, fully self-aligned lateral BJT on thin film SOIsubstrate for lower power BiCMOS applications”, VLSI Technology, 1995.Digest of Technical Papers. 1995 Symposium on VLSI Technology, 6-8 Jun.1995, page(s) 133-134; T. Shino, et al. “A 31 GHz fmax lateral BJT onSOI using self-aligned external base formation technology”, ElectronDevices Meeting, 1998. IEDM '98 Technical Digest, International, 6-9Dec. 1998, page(s) 953-956; T. Yamada, et al. “A novel high-performancelateral BJT on SOI with metal-backed single-silicon external base forlow-power/low-cost RF applications”, Bipolar/BiCMOS Circuits andTechnology Meeting, 1999. Proceedings of the 1999, 1999, page(s)129-132;and T. Shino, et al. “Analysis on High-Frequency Characteristics of SOILateral BJTs with Self-Aligned External Base for 2-GHz RF Applications”,IEEE, TED, vol. 49, No. 3, pp. 414, 2002.

Even though lateral SOI BJT devices are easier to integrate with SOICMOS, the performance of such devices is quite limited. This is becausethe base width in the lateral SOI BJTs is determined by lithography.Hence it cannot be scaled down (less than 30 nm) readily without moreadvanced and more expensive lithography technologies such as e-beamlithography.

Another type of SOI BJT, which is a vertical SOI SiGe bipolar devicewith a fully depleted collector, has also been proposed, anddemonstrated to offer higher base-collector breakdown voltage, higherearly voltage and better breakdown voltage of the collector and emitterwith an opened base (BV_(CEO))-cutoff frequency f_(T) tradeoff. See, forexample, U.S. Patent Application Publication 2002/0089038 A1 to T. Ning,and co-assigned U.S. application Ser. No. 10/328,694, filed Dec. 24,2002. However, the integration process of these vertical SOI BJTs andSOI CMOS is still quite complex and expensive.

In view of the above, there is a need for providing a new and improvedvertical SOI bipolar transistor that overcomes the drawbacks associatedwith prior art SOI BJTs.

SUMMARY OF THE INVENTION

The present invention overcomes the problems of prior art vertical SOIBJTs by providing a “collector-less” SOI BJT which has no impurity-dopedcollector. Instead, the inventive vertical SOI BJT uses a backgate-induced, minority carrier inversion layer as the intrinsiccollector when it operates. In accordance with the present invention,the SOI substrate is biased such that an inversion layer is formed atthe bottom of the base region serving as the collector. The advantage ofsuch a device is its CMOS-like process. Therefore, the integrationscheme can be simplified and the manufacturing cost can be significantlyreduced. However, for a typical SOI substrate with a buried oxide (BOX)thickness of 100 nm, a substrate bias of 30 V is required in order togenerate the inversion layer. Such a high bias is not desirable. Inorder for such a bipolar device to be practical for BiCMOS on SOIapplications, the substrate bias should be equal to or less than thebias applied to the CMOS, typically 3 V or less.

The present invention also provides a method of fabricating BJTs onareas of a very thin BOX using a conventional SOI starting wafer with athick BOX. The reduced BOX thickness underneath the bipolar devicesallows for a significantly reduced substrate bias compatible with theCMOS to be applied while maintaining the advantages of a thick BOXunderneath the CMOS.

The bipolar transistor of the present invention, which has noimpurity-doped collector, but rather uses a back gate-induced, minoritycarrier inversion layer as the collector is built on an SOI substrate inwhich the SOI thickness is preferred to be thin (less than 50 nm) forhigh performance. This is because the SOI thickness now dictates thebase width in normal operation. The inventive device has no intrinsiccollector when the substrate is not positively biased. When a positivebias is applied to the substrate, the holes in the p-type base willbegin to deplete at the Si/SiO₂ interface, for an NPN transistor. If thesubstrate bias is higher than the threshold voltage, a thin inversionlayer (electrons, approximately 5 nm) is formed and serves as theintrinsic collector. The inventive device becomes a vertical BJT afterthis thin inversion layer forms. For a PNP transistor, a negative biasis applied to the substrate and holes form in the thin inversion layer.

In broad terms, the inventive bipolar transistor comprises a conductiveback electrode for receiving a bias voltage; an insulating layer locatedover the conductive back electrode; a first semiconductor layer locatedover the insulating layer, the first semiconductor layer including abase containing a first conductive type dopant and an extrinsiccollector containing a second conductivity type dopant, the extrinsiccollector borders the base; and an emitter comprising a secondsemiconductor layer containing the second conductivity type dopantlocated over a portion of the base, wherein the conductive backelectrode is biased to form an inversion charge layer in the base at aninterface between the first semiconductor layer and the insulatinglayer.

The device structure of the present invention can provide complementaryBJTs and can be integrated directly with the current SOI CMOStechnology. Hence, a complementary Bi/CMOS can be realized and providenew opportunities for circuit innovations. In one embodiment, a fieldeffect transistor is formed in areas adjacent to the bipolar transistorof the present invention, said transistors being separated by trenchisolation regions.

Simulation studies have shown that very good performance can be achievedwith the inventive device structure. Simulation results show that withoptimization of the device design, the Si-base (not SiGe-base) bipolardevice can achieve ƒ_(T)=55 GHz and ƒ_(max)=132 GHz or ƒ_(T)=70 GHz,ƒ_(max)=106 GHz. On the other hand, the lateral SOI BJTs of the priorart have been demonstrated with ƒ_(T)=16 GHz and ƒ_(max)=25 GHz, ƒ_(T)=7GHz and ƒ_(max)=60 GHz. See, for example, T. Shino and T. Yamada ibid,respectfully. In the foregoing, ƒ_(T) denotes the frequency when thecurrent gain becomes unity and ƒ_(max) denotes the maximum oscillationfrequency at which the unilateral power gain becomes unity.

Since typical SOI wafers normally have a relatively thick buried oxide(BOX) of greater than 100 nm, the substrate bias has to be greater than30 V in order to form the inversion layer collector. Such a high bias isnot desirable. In the present invention, a method of forming a localizedthin BOX for the bipolar transistor with regular SOI wafers is provided.In broad terms, the method of the present invention includes the stepsof: providing a silicon-on-insulator substrate comprising a firstsemiconductor layer located over a first insulating layer, wherein aportion of the first insulating layer beneath the first semiconductorlayer is removed providing an undercut region; forming a secondinsulating layer on exposed surfaces of the first semiconductor layer,wherein the second insulating layer is thinner than the first insulatinglayer; filling the undercut region and the removed portion of the firstsemiconductor layer with a conductive material as the back electrode;forming an extrinsic base containing a first conductivity dopant and anextrinsic collector containing a second conductivity type dopant inportions of the first semiconductor layer; forming an emitter comprisinga second semiconductor layer containing the second conductivity typedopant over a portion of said first semiconductor layer; and biasing theconductive back electrode to form an inversion charge layer at aninterface between the first semiconductor layer and the secondinsulating layer.

Specifically, a trench is first etched through the SOI layer of an SOIsubstrate exposing the BOX which is normally 100-500 nm thick. A portionof the thick BOX is then removed using an isotropic etch process thatundercuts the SOI layer. The isotropic etch is performed in the presentinvention after removing any pad layers from atop the SOI layer. If thepad layers remain on the SOI layer during this etching process, the SOIlayer tends to bend upwards or downwards depending on the initial stressin the pad layers. Hence, pad layers are removed from the SOI layerprior to this etching step so that there are no films imparting stresson top of the SOI layer during the etching of the thick BOX. A thinoxide layer (less than 15 nm) is then grown or deposited to form thethin BOX. The trench and area where the thick BOX was removed is filledin with doped polysilicon. The doped polysilicon can be formed in-situor after deposition of polysilicon by ion implantation. Thepolysilicon-fill can then be used to apply a substrate bias. With such areduced BOX thickness underneath the bipolar devices, a significantlyreduced substrate bias (less than 3 V) compatible with the CMOS is ableto create a strong enough vertical electric field to form an inversionlayer (inducing electrons) to form the intrinsic collector, whilemaintaining the advantages of a thick BOX underneath the CMOS.

There are no known alternative solutions to this problem. One possiblealternative is to use a patterning process to form regions of thin andthick BOX on the SOI wafer during a separation by ion implantation ofoxygen (SIMOX) process. However, by using an oxygen implant, it isdifficult to make a thin BOX of less than 15 nm and have good control ofthe BOX thickness. Also, this method would require costly additionallithography and implant steps to produce the SOI wafers.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows the top down view for a single-finger emitter device ofthe present invention.

FIG. 1B shows the top down view for a two-finger emitter device of thepresent invention. A multi-finger configuration reduces the emitterresistance for achieving high f_(max).

FIGS. 1C and 1D show the cross-sectional schematics of the single-fingeremitter device of FIG. 1A along two directions, D-D′, and C-C′.

FIG. 2 is a simulated Gummel plot for a device with W_(E)=100 nm,T_(SOI)=50 nm, N_(B)=2e18 cm⁻³ and T_(ox)=10 nm at V_(SE)=3 V andV_(CE)=3 V.

FIG. 3 is a simulated output characteristics for the device in FIG. 2 atV_(SE)=3 V.

FIG. 4 is a simulated ƒ_(T) and ƒ_(max) vs. Ic for the device in FIG. 2at V_(SE)=3 V.

FIG. 5 is a simulated peak ƒ_(T) and ƒ_(max) vs. V_(SE) for the devicein FIG. 2 at V_(CE)=3 V.

FIG. 6 is a one-dimensional cut of carrier concentration through thecenter of the emitter for the device in FIG. 2 at V_(CE)=3 V,V_(BE)=0.86 V, and V_(SE)=0, 1 and 3 V.

FIG. 7 is a two-dimensional contour of the net carrier concentration forthe device in FIG. 2 at V_(SE)=3 V, V_(CE)=3 V and V_(BE)=0.86 V.

FIGS. 8A-8E illustrate the process flow employed in the presentinvention for creating the thin BOX region.

FIGS. 8F-8G show cross sectional SEMs of an SOI wafer that is subjectedto the method of the present invention. The BOX was undercut by 0.3microns. An 8 nm thick thermal oxide was then grown followed by LPCVDpolysilicon fill.

FIG. 8H is an expanded view of the structure shown in FIG. 8E.

FIGS. 9A-9H depict the process flow of the present invention forfabricating the bipolar device after thin BOX formation.

FIG. 10 is a cross-sectional view of a ‘collector-less’ vertical bipolartransistor of the present invention including a raised extrinsiccollector and a raised extrinsic base.

DETAILED DESCRIPTION OF THE INVENTION

The present invention, which provides an ultra-thin SOI vertical bipolartransistor with an inversion collector on a thin BOX for low substratebias operation and a method of fabricating the same, will now bedescribed in more detail by referring to the drawings that accompany thepresent application.

As stated above, the present invention provides a bipolar transistorstructure that includes a conductive back electrode for receiving a biasvoltage, an insulating layer located over the conductive back electrode,and a first semiconductor layer located over the insulating layer. Thefirst semiconductor layer includes a base containing a first conductivetype dopant and an extrinsic collector containing a second conductivitytype dopant. In accordance with the present invention, the extrinsiccollector borders the base. The inventive bipolar transistor alsoincludes an emitter comprising a second semiconductor layer of thesecond conductivity type dopant located over a portion of the base.During operation, the conductive back electrode is biased to form aninversion charge layer in the base at an interface between the firstsemiconductor layer and the insulating layer. The configuration of theinventive bipolar transistor structure will become more apparent byreferring to FIGS. 1A-1D.

Two device layouts of the inventive bipolar transistor are shown inFIGS. 1A and 1B. The device layouts shown in FIGS. 1A-1B represent twodifferent embodiments of the present invention. In the embodiment shownin FIG. 1A, a single-finger emitter device is shown, while in FIG. 1B atwo-finger emitter device is shown. By “finger”, it is meant that theemitter has at least one portion that extends outward from a commonemitter region. Although FIGS. 1A and 1B show one-finger and two-fingeremitter devices, respectively, the present invention is not limited toonly those types of devices. Instead, the present invention contemplatesthin-BOX device layouts that include a number of emitter-fingers.Multi-finger configurations are preferred over the singe-finger devicelayout since they typically reduce the emitter resistance for achievinghigh ƒ_(max).

In the two device layouts shown in FIGS. 1A-1B, reference numeral 106denotes metal pads formed atop the device after back-end-of-the-line(BEOL) processing, reference numeral 24 denotes the conductive backelectrode, reference numeral 28 denotes isolation regions, referencenumeral 52 denotes poly emitter, reference numeral 102 denotes theactive area, reference numeral 60 denotes metal contacts formed in aninterlevel dielectric having contact openings, reference numeral 41denotes the extrinsic collector, typically an n+ implant region, andreference numeral 45 denotes the extrinsic base, typically a p+ implantregion. The opposite conductivities for the extrinsic base and theextrinsic collector are also contemplated herein. The terms substrate,emitter, collector, and base, are included within FIGS. 1A-1B to provideproper orientation to the viewer.

In the one-fingered embodiment of the present invention, theemitter-finger 104 is located on axis D-D′ between the extrinsic base 45and the extrinsic collector 41, which lie along the axis C-C′. Thedevice layout shown in FIG. 1A represents the simplest layout thatrequires the smallest area for fabrication.

In the two-fingered embodiment, the extrinsic base 45 is located betweenthe two-emitter fingers 52 and the extrinsic collectors 41 are locatedat either side of the structure. Thus, in the two-finger emitter layoutthe two outer extrinsic collectors 41 have a single common innerextrinsic base 45. As indicated above, the two-figured device layoutreduces emitter resistance thereby increasing ƒ_(max). This devicelayout requires more space to fabricate than the single-fingered devicelayout shown in FIG. 1A and a larger collector area (as compared to thesingle-fingered emitter device) also reduces the collector resistance.

The cross sectional views of the single-finger emitter device layout isshown in FIGS. 1C and 1D. FIG. 1C is the cross sectional view along theaxis C-C′, while FIG. 1D is the cross sectional view along the axisD-D′. Specifically, the cross sectional views shown in FIG. 1C and FIG.1D depict a vertical bipolar transistor 10 of the present invention. Thevertical bipolar transistor 10 includes a Si-containing substrate layer14, a first insulating layer 16 (hereinafter referred to the thickburied oxide, BOX) having a first thickness, a second insulating layer(hereinafter referred to as the thin BOX) having a second thickness thatis less than the first thickness of the thick BOX 16. As shown, thethick BOX 16 is located on an upper surface of the Si-containingsubstrate 14, and a lower portion of the thin BOX 22 l is also locatedon the upper surface of the Si-containing substrate 14, while an upperportion of the thin BOX 22 u is located on an upper surface ofconductive back electrode 24. The upper thin BOX 22 u is the insulatinglayer in which the inversion layer will form thereon. The thin BOXrepresented by 22 l and 22 u can also be referred to herein by justreference numeral 22.

The vertical bipolar transistor shown in FIGS. 1C-1D further includestrench isolation regions 28 that are located, as shown in FIG. 1C, atopthe thick BOX 16, as well as atop the conductive back electrode 24, asshown in FIG. 1D. Hence, the trench isolation regions 28 surround theactive device region of the structure. The structure also includes afirst semiconductor layer 18 (hereinafter referred to as the SOI layer)which is located on the upper portion of the thin BOX 22 u as well as aportion of the thick BOX 16. The first semiconductor layer 18 is theoriginal SOI layer of the initial substrate employed in the presentinvention.

In accordance with the present invention, the first semiconductor layer18 comprises a base 100 of the bipolar transistor that is doped with afirst conductivity type dopant, either an n- or p-type dopant and anextrinsic collector 41 that is doped with a second conductivity typedopant, either an n- or p-type dopant, which is different from the firstconductivity type dopant. The first semiconductor layer 18 also includesan extrinsic base 45 that is doped with the first conductivity typedopant. The extrinsic base 45 has a greater dopant density, i.e.,concentration, as compared to the base 100. As shown, the extrinsiccollector 41 borders the base 100 on one side of the bipolar transistorand the extrinsic base 45 borders the other side of the base 100. Atopof base 100 is an emitter 52 which is comprised of a secondsemiconductor layer. The second semiconductor layer forming emitter 52may be comprised of the same or different material as the firstsemiconductor layer 18. The emitter 52 is heavily doped with the secondconductivity type dopant. Spacers 36 are shown about the emitter 52.

The emitter 52, the extrinsic collector 41, and the extrinsic base 45have a metal silicide 56 formed thereon. A metal silicide 56 is alsoformed, as shown in FIG. 1D, on any exposed surface of conductive backelectrode 24. The metal silicide 56 located atop the exposed surfaces ofthe conductive back electrode 24 is the region in which biasing of thesubstrate can take place. During biasing, a portion of the base 100 thatis located atop the upper thin BOX 22 u is converted into an inversioncharge layer 62. The inversion charge layer 62 is a minority carrierlayer which serves as the collector of the inventive bipolar transistor.This is unlike prior art bipolar transistor in which the collector iscomprised of an impurity-doped region.

A single-finger emitter device such as the one depicted in FIG. 1D hasbeen simulated to check the device performance. The device has anemitter stripe width of 100 nm, a box-like base doping profile (N_(B))of 2E18 cm⁻³ and a SOI thickness of 50 nm. FIGS. 2 and 3 show the Gummelplot and the output characteristics respectively, at V_(SE)=3 V. Thecurrent gain (β) is above 230 over a wide range of the collectorcurrent. The Early voltage (V_(A)) is 102 V. The RF performance isextracted from small signal analyses, and is plotted at V_(SE)=3 V inFIG. 4. ƒ_(T) and ƒ_(max) reach their peak values of 35 GHz and 118 GHzat I_(C)=132 mA/mm, respectively. The impact of the substrate bias onthe RF performance is shown in FIG. 5, where the peak ƒ_(T) and ƒ_(max)are plotted vs. V_(SE).

FIG. 6 shows a vertical cut of the carrier concentration through thecenter of the emitter at the biases of V_(CE)=3 V, V_(BE)=0.86 V andV_(SE)=0, 1 and 3 V. At V_(SE)<1 V, the inversion layer is unable toform at the back interface, and the device is a quasi-lateral BJT withthe n⁺⁺ region as the collector. However, at V_(SE)>1 V, the inversionlayer forms, and the device becomes a vertical BJT with the inversionlayer as the collector, as seen in FIG. 7, where a two-dimensionalcontour of the net carrier concentration at V_(SE)=3 V is illustrated.The substrate bias creates both the inversion layer and a depletionlayer above it, and it also acts like the bias on the virtual collector.As V_(SE) increases, the depletion layer gets wider and the inversiongets stronger, hence W_(B) reduces and r_(b) increases while r_(c) andC_(dBC) decrease. The net result is that ƒ_(T) and ƒ_(max) increase withincreasing V_(SE), as shown in FIG. 5. However, the increasing rb slowsdown the enhancement in ƒ_(max), particularly at large V_(SE) values.Very high V_(SE) should be avoided in practice in order to prevent oxidebreakdown and base-collector punchthrough. Furthermore, it is noted thatV_(BE) also affects the depletion width and induced electronconcentration. This is analogous to the body effect in a MOSFET, onlythat the body in our case is biased via a forward-biased p/n junction(E-B).

In the above two paragraphs, W_(B) is the base width, rb is the baseresistance, r_(c) is the collector resistance, and C_(dBC) is thebase-collector capacitance. The “V's” denote a potential which isapplied between the collector and emitter, V_(CE), between the base andthe emitter, V_(BE), and between the substrate and emitter, V_(SE).

The process flow for making the thin BOX 22 is illustrated in FIGS.8A-8E. Although BOX layers are depicted and described as oxides, thepresent invention works equally well when the thick BOX 16 and the thinBOX 22 are other insulating materials, i.e., nitride or oxynitrides.FIG. 8A shows the cross-section of a typical SOI substrate 12 used for ahigh-performance CMOS application that can be employed in the presentinvention. The initial SOI substrate 12 comprises a Si-containingsubstrate layer 14, a thick BOX 16, and a top Si-containing layer 18(which is, in accordance with the nomenclature of the present invention,the first semiconductor layer or the SOI layer). The term“Si-containing” is used herein to denote any semiconductor material thatincludes silicon therein. Illustrative examples of such Si-containingmaterials include but are not limited to: Si, SiGe, SiGeC, SiC, Si/Si,Si/SiGe, preformed SOI wafers, silicon germanium-on-insulators (SGOI)and other like semiconductor materials.

The SOI layer 18 of the initial SOI substrate 12 is typically a dopedlayer, which may contain an n- or p-type dopant. Doping can beintroduced into the SOI layer 18 prior to, or after formation of the SOIsubstrate 12. A portion of the doped SOI layer 18 is the base 100 of theinventive bipolar transistor 10. The dopant concentration within the SOIlayer 18 is typically from about 1E17 to about 1E19 atoms/cm³.

The Si-containing layer 18 of the SOI substrate 12 may have a variablethickness, which is dependent on the technique that is used in formingthe SOI substrate 12. Typically, however, the Si-containing layer 18 ofthe SOI substrate 12 has a thickness from about 10 to about 1000 nm,with a thickness from about 50 to about 500 nm being more typical. Thethickness of the thick BOX 16 may also vary depending upon the techniqueused in fabricating the SOI substrate 12. Typically, however, the thickBOX 16 of the present invention has a thickness from about 100 to about1000 nm, with a BOX thickness from about 120 to about 200 nm being moretypical. The thickness of the Si-containing substrate layer 14 of theSOI substrate 12 is inconsequential to the present invention.

The initial SOI substrate 12 can be formed using a layer transferprocess such as, a bonding process. Alternatively, a technique referredto as separation by implanted oxygen (SIMOX) wherein ions, typicallyoxygen, are implanted into a bulk Si-containing substrate and then thesubstrate containing the implanted ions is annealed under conditionsthat are capable of forming a buried insulating layer, i.e., thick BOX16, can be employed.

Next, and as shown in FIG. 8B, at least one trench 26 that extends tothe upper surface of the Si-containing substrate layer 14 is formed bylithography and etching. The lithography step includes applying aphotoresist to the surface of the SOI substrate 12, exposing thephotoresist and developing the exposed photoresist using a conventionalresist developer. The etching step used in forming the trench 26includes any standard Si directional reactive ion etch process. Otherdry etching processes such as plasma etching, ion beam etching and laserablation, are also contemplated herein. The etch can be stopped on thetop of the thick BOX 16 (not shown), or on the Si-containing substrate14 underneath the thick BOX 16, as shown in FIG. 8B. As shown, portionsof the SOI layer 18 and the thick BOX 16 that are protected by thepatterned photoresist are not removed during etching. After etching, thepatterned photoresist is removed utilizing a conventional resiststripping process.

An isotropic oxide etch selective to silicon (such as a timedhydrofluoric acid based etch or similar etch chemistry) is then used toremove portions of the thick BOX 16 underneath the SOI layer 18 wherethe vertical bipolar device will be fabricated (See FIG. 8C). Theisotropic etch forms an undercut 20 beneath the SOI layer 18 that willbe subsequently filled with a conductive back electrode material. TheSOI layer 18 is supported by portions of the thick BOX 16 that are notremoved by this etch. Before this etching step, all pad layers should beremoved from atop the SOI layer otherwise bending of the SOI layeroccurs.

A thermal process such as a wet and/or dry oxidation, nitridation oroxynitridation, is then used to grow the second insulating layer 22,i.e., thin BOX, on the exposed surfaces of the SOI layer 18, see FIG.8D. Note that the second insulating layer 22 forms on the exposedhorizontal and vertical surfaces of the SOI layer 18 as well as theexposed surface of the Si-containing substrate layer 14. The thin BOX 22formed on the SOI layer 18 is given the reference numeral 22 u, whilethe BOX formed in the Si-containing substrate layer 124 is given thereference numeral 22 l. In accordance with the present invention, thethin BOX 22 has a second thickness that is less than the first thicknessof the first insulating layer, i.e., thick BOX 16. Typically, the thinBOX 22 has a thickness from about 1 to about 15 nm. Deposited oxidessuch as a low-temperature oxide (LTO) or a high-density oxide (HTO) canalso be employed. When deposited oxides are used, the oxide would alsobe present on the sidewalls of the opened structure as well. Note thatthe oxide also grows, although to a lesser extent, on oxide surfaces aswell. The growth of oxide on an oxide surface is not, however,differentiated in the drawings of the present application.

At this point of the present invention, a conductive back gate electrodematerial such as, for example, doped polysilicon, a silicide or aconductive metal is deposited to fill in the area previously occupied bythe removed thick BOX 16. The deposition is performed using aconventional deposition process such a chemical vapor deposition,plasma-assisted chemical vapor deposition, chemical solution deposition,evaporation and the like. In one embodiment, doped polysilicon is usedas the conductive back electrode material and it is deposited at atemperature from about 400° to about 700° C. using a low-pressurechemical vapor deposition (LPCVD) process. Doping of the polysiliconlayer may occur in-situ or after deposition using an ion implantationprocess. The structure can then be planarized, if needed, by chemicalmechanical polishing or by a dry etch of the polysilicon selective tooxide. The resultant structure that is formed after performing the abovesteps is shown, for example, in FIG. 8E.

FIG. 8F and FIG. 8G show an SEM cross section of an SOI wafer thatunderwent the process described above. The BOX was undercut by 0.3microns. An 8 nm thick thermal oxide was then grown followed by LPCVDpolysilicon fill.

FIG. 8H shows an expanded cross sectional view of the structure depictedin FIG. 8E. Region 102 denotes the active device area in which a bipolartransistor can be formed. The active area 102 includes an upper thin BOX22 u located atop the conductive back electrode 24. The conductiveelectrode 24, in turn, is located on the lower thin BOX 22 l, which islocated atop the Si-containing substrate layer 14.

FIGS. 9A-9H depict a simple process flow for fabricating the bipolardevice after thin BOX formation. Although the method is depicted anddescribed herein, the present invention contemplates other methods offorming a bipolar transistor atop the active areas 102 of the structureshown in FIG. 8H. In the embodiment described and illustrated, theextrinsic collector 41 and the extrinsic base 45 are self-aligned to theemitter 52 using the spacers 36 as in a conventional CMOS process. Afterfabricating the bipolar transistor shown in FIG. 9H, a metallic pad 106can be formed atop the interlevel dielectric 58 having conductive filledopenings 60.

The bipolar transistor is formed by first forming trench isolationregions 28 in the structure shown in FIG. 8E or 8H. The trench isolationregions 28 are formed by conventional processes well known in the artincluding, for example, trench definition and etching, optionally liningthe trench with a liner material and then filling the trench with atrench dielectric material such as, for example, tetraethylorthosilicate(TEOS) or a high-density oxide. The trench dielectric material can bedensified after the filling of the trench and, if needed, aplanarization process, such as chemical mechanical polishing can beperformed.

Next, a screen oxide 30 is formed on the surface of the structure by athermal oxidation process or by a conventional deposition process suchas chemical vapor deposition. The thickness of the screen oxide 30 canvary depending on the technique used in forming the same. Typically, thescreen oxide 30 has a thickness from about 2 to about 10 nm. Afterformation of the screen oxide 30, a dummy emitter layer is formed by adeposition process such as chemical vapor deposition, plasma chemicalvapor deposition, evaporation or other like technique. The dummy emitterlayer can be composed of any material such as doped or undopedpolysilicon. The dummy emitter layer formed at this point of the presentinvention typically has a thickness from about 50 to about 200 nm.

After deposition of the dummy emitter layer, the dummy emitter layer ispatterned by lithography and etching so as to form a dummy emitter 32 ona portion of the screen oxide 30 that lays above the thin BOX 22 and theconductive back electrode 24.

In an optional embodiment (not shown), a low temperature oxide (LTO)layer can be formed atop the structure including the dummy emitter 32(including the sidewalls) using a deposition process that is performedat a temperature from about 400° to about 650° C. The thickness of theoptional LTO may vary, but typically, the optional LTO has a thicknessfrom about 1 to about 10 nm.

A nitride-containing layer 34 having a thickness from about 50 to about200 nm can be formed atop the structure including the dummy emitter 32,with or without the optional LTO. The nitride-containing layer 34 can becomprised of any nitrogen-containing dielectric including, for example,Si₃N₄ or SiON. The nitride-containing layer is formed by a conventionaldeposition process such as, for example, chemical vapor deposition.

The structure including the trench isolation regions 28, screen oxide30, dummy emitter 32 and nitride-containing layer 34 is shown, forexample, in FIG. 9A.

The nitride-containing layer 34 is then subjected to an anisotropicetching process to form nitride spacers 36 on the sidewalls of the dummyemitter 32. Each nitride spacer 36 has a length, shown as Lsp1 or Lsp2,as measured from the bottom surface of the spacer, from about 30 toabout 150 nm. The length of the spacers 36 should be sufficiently wideto include the tolerance for lateral diffusion of dopants from theextrinsic base and the extrinsic collector and undercut of the screeningoxide 30 when opening the emitter.

A photoresist is then deposited and patterned by lithography so as toprovide a patterned mask 38 over a preselected portion of the structure,while leaving another portion of the structure exposed. In particular,portions of the SOI layer 18 in which either the extrinsic collector orintrinsic base is to be formed can be protected by the patterned mask38, while exposing other portions of the SOI layer in which either theextrinsic collector or the extrinsic base is to be formed.

In FIG. 9B, the patterned mask 38 is located atop the portion of the SOIlayer in which the extrinsic collector is to be subsequently formed.Depending on the area protected, a p or n-type dopant can be implantedinto the structure. In the embodiment illustrated, the patterned mask 38is located atop the region in which the extrinsic base will subsequentlybe formed and an n+ dopant such as P or As is implanted into the exposedSOI layer 18 forming extrinsic collector 41, see FIGS. 9B and 9C.Reference numeral 40 denotes the ions being implanted into thestructure, see FIG. 9B. The dopant concentration for the n-type implantis typically from about 1E19 to about 2E20 atoms/cm³.

Next, the patterned mask 38 is removed and another patterned mask 42 isformed by lithography and etching over the previously implanted area.The exposed SOI layer 18, not containing the previous implant, is thenimplanted with the opposite conductivity type dopant. For example, a p+dopant such as boron, BF₂ or Sb is then implanted into the exposed SOIlayer 18 forming extrinsic base 45, see FIG. 9D. In FIG. 9C, referencenumeral 44 denotes the p type dopants being implanted into thestructure. The patterned mask 42 is removed after the implant step. Thedopant concentration for the p-type implant is typically from about 1E19to about 1E20 atoms/cm³.

It is emphasized that although the extrinsic collector 41 is shown asbeing formed prior to the formation of the extrinsic base 45, thepresent invention also contemplates the reverse order of fabrication.

The depth of the dopants being implanted in each of the steps mentionedabove is such that after activation thereof the implant region canextend to the surface of the thin BOX layer 22 u, or the implants do notneed to extend down to the thin BOX 22 u. In FIG. 9D, the extrinsiccollector 41 is shown to be in contact with the underlying thin BOX 22u, while the intrinsic base 45 is not. The extrinsic base 45 and theextrinsic collector 41 are separated by the base 100. Typically, thebase 100 and the extrinsic base 45 contain the same dopant conductivity,but with different concentrations, while the extrinsic collector 41 hasan opposite dopant conductivity to either the base 100 or the extrinsicbase 45.

Next, and as also shown in FIG. 9D, an etch stop layer 46 composed of adielectric other than an oxide such as, for example, a nitride is formedatop the structure shown in FIG. 9C. The etch stop layer 46 is arelatively thick layer having a thickness on the order of greater than50 nm. The etch stop layer 46 is formed by a conventional depositionprocess well known in the art including, for example, a room temperaturechemical vapor deposition, plasma-assisted chemical vapor deposition,chemical solution deposition and evaporation.

Next, a planarizing material 48 such as boron phosphorous doped silicateglass (BPSG), TEOS or another like dielectric is then deposited by aconventional deposition process atop the structure including the etchstop layer 46, which as indicated above, has a thickness of greater than50 nm. The resultant structure is shown, for example, in FIG. 9D. Theplanarizing material 48 has a deposited thickness that is typically fromabout 500 to about 1000 nm.

After forming the planarizing material 48, the structure, in particularthe planarizing material, is planarized by a planarization process suchas chemical mechanical polishing, grinding, etching or any combinationthereof. The planarization stops atop the surface of the etch stop layer46 that is located above the dummy emitter 32. The etch stop layer 46atop the dummy emitter 32 is then removed utilizing an etching processthat is selective for removing the etch stop layer 46. This etching stepexposes the upper surface layer of the dummy emitter 32, which isthereafter removed utilizing an etching step that selectively removesthe dummy emitter material from the structure. The removal of the dummyemitter 32 exposes the upper surface of the screen oxide 30. The exposedportion of the screen oxide 30 is then removed utilizing an etchingprocess that selectively removes oxide. Illustrative examples of etchingprocess that selectively remove oxide include a dry HF etch or achemical oxide removal etch wherein a plasma of HF and ammonia isemployed. As shown in FIG. 9E, undercut regions (not labeled) can beformed beneath spacers 36.

The planarization step and the various etching steps mentioned in theprevious paragraph provide a structure such as shown in FIG. 9E whichincludes emitter opening 50 that exposes a surface portion of base 100.

A polysilicon layer or other like semiconductor material, which will besubsequently formed into emitter 52, is deposited into the emitteropening 50 using a deposition process and then ion implantation or byutilizing an in-situ deposition process. The polysilicon layer or otherlike semiconductor material contains a dopant type that is opposite ofthat of the base. For example, if the base 100 contains a p-type doped,then the polysilicon layer or the like semiconductor layer formed atthis point of the present invention will contain an n-type dopant. Thethickness of the deposited polysilicon or other like semiconductor layermay vary depending on the deposition process used in forming the same.Typically, however, the polysilicon or other like semiconductor layerhas a thickness that is from about 60 to about 250 nm.

A hardmask which has a thickness that is typically greater than thepreviously formed etch stop layer 46 is then deposited on thepolysilicon (or other like semiconductor material) via a conventionaldeposition process. The thickness of the hardmask is generally greaterthan about 50 nm. The hardmask is typically composed of the samedielectric material as the etch stop layer 46. Alternatively, thehardmask is composed of a dielectric material that is different from theetch stop layer 46.

The hardmask and the polysilicon layer (or other like semiconductorlayer) are then patterned by lithography and etching so as to provide astructure such as shown, for example, in FIG. 9F. In the illustratedstructure, a patterned hard mask 54 and an emitter 52 are formed. Theemitter 52 may have the T-shaped pattern shown in the drawings or, itmay have a different pattern such as a block-shaped emitter. The widthWee of the emitter 52, as measured at the top surface, is generally fromabout 100 to about 500 nm.

The structure shown in FIG. 9F is then subjected to an etch back processwherein exposed portions of the planarizing material 48, underlying etchstop layer 46, and screen oxide 30 are each removed. The various layersmentioned in the previous sentence can be removed in one etching step orpreferably multiple etching steps are employed. The etch chemistriesused in removing the planarizing material 48, etch stop layer 46 andscreen oxide 30 are selective in removing the various layers from thestructure. Note that the hardmask 54 is typically removed during theetch back process. Alternatively, the hardmask 54 can be removed afterthe etch back process.

After the etch back step, which exposes the extrinsic collector 41, theextrinsic base 45, trench isolation oxide 28, and typically the emitter52 and the conductive back electrode 24, the exposed surface containingSi, i.e., extrinsic collector 41, extrinsic base 45, conductive backelectrode 24 and emitter 52, are then subjected to a conventionalsilicidation process in which a silicide metal such as Ti, Ni, Co, W, Reor Pt is first deposited and then annealed to cause interaction of themetal and Si and subsequent formation of silicide 56 on each regionincluding metal and Si. Alloys of the above mentioned metals are alsocontemplated herein. Any remaining metal, not silicided, is typicallyremoved after the silicide process using a conventional wet etchingprocess. The resultant structure after etch back and silicidation isshown in FIG. 9G. It is noted that the silicides formed in the extrinsiccollector 41 and the extrinsic base 45 are self-aligned to the base 100.Also, the silicide atop of the emitter 52 is self-aligned to the emitter52.

At this point of the present invention, an optional barrier materialsuch as a nitride can be formed atop the structure shown in FIG. 9G. Theoptional barrier material is not shown in the drawings of the presentinvention.

An interconnect dielectric 58 such as, for example, boron phosphorusdoped silicate glass, an oxide, an organic polymer or an inorganicpolymer is then deposited using a conventional deposited process such aschemical vapor deposition, plasma-assisted chemical vapor deposition,evaporation, spin-on coating, chemical solution deposition and the like.The interconnect dielectric 58 has a thickness after deposition that ison the order of about 500 to about 1000 nm. After deposition of theinterconnect dielectric 58, the interconnect dielectric 58 is planarizedby chemical mechanical polishing or other like planarization process soas to have a thickness after planarization from about 300 to about 600nm and thereafter a contact opening that extends to the surface of eachsilicide 56 is formed by lithography and etching. Each of the contactopenings is then filled with a metal contact 60 such as W, Cu, Al, Pt,Au, Rh, Ru and alloys thereof. The resultant structure is shown, forexample, in FIG. 9H.

The structure shown in FIG. 9H can now be biased by applying an externalvoltage to the conductive back electrode 24 through the contactsproduced above. The biasing causes an inversion charge layer 62 to beformed in a portion of the base 100 that is located above the thin BOX22 u. The amount of voltage applied in forming the inversion chargelayer 62 is typically 5 V or less. The inversion charge layer 62 servesas the collector of the inventive structure.

In another embodiment of the present invention and in order to achievehigh performance, the SOI layer 18 has to be thin (less than 50 nm) andthe series resistance of the extrinsic collector 41 and extrinsic base45 can be quite high even if they are heavily doped. Therefore,selective silicon or SiGe epitaxy can be used to form raised extrinsiccollector 41′ and raised extrinsic base 45′ in order to reduce theseries resistance, as shown in FIG. 10.

The methods described above can be used to form a plurality of verticalbipolar transistors on the active area of the SOI substrate shown inFIG. 8E. The methods described above can also be used in conjunctionwith a conventional CMOS process flow which is capable of forming CMOSdevices such as field effect transistors, in areas adjacent to the areascontaining the vertical bipolar transistors of the present invention, toform BiCMOS for RF or mixed-signal applications. In the prior art, theCMOS devices are typically formed prior to the bipolar devices with CMOSareas usually protected during fabrication of the bipolar transistors.The drawback of this method is that the MOS device performance oftenbecomes degraded to the excessive thermal budget that CMOS devicesexperience during the fabrication of the dipolar devices, such as dopantactivation anneal after implants. An advantage of this invention overprior art processes is that the inventive method utilizes the typicalCMOS process to form a bipolar device hence the CMOS and bipolar devicescan be fabricated interactively and share the same activation anneal.Only one additional blocking mask is needed to fabricate the bipolardevices together with the CMOS in order to form the BiCMOS.

While the present invention has been particularly shown and describedwith respect to preferred embodiments, it will be understood by thoseskilled in the art that the foregoing and other changes in forms anddetails may be made without departing from the spirit and scope of thepresent invention. It is therefore intended that the present inventionnot be limited to the exact forms and details described and illustrated,but fall within the scope of the appended claims.

1. A bipolar transistor comprising: a conductive back electrode forreceiving a bias voltage; an insulating layer located over saidconductive back electrode; a first semiconductor layer located over saidinsulating layer, said first semiconductor layer comprising a base whichincludes a first conductive type dopant and an extrinsic collector whichincludes a second conductivity type dopant, said extrinsic collectorborders said base; and an emitter comprising a second semiconductorlayer of the second conductivity type dopant located over a portion ofsaid base, wherein said conductive back electrode is biased to form aninversion charge layer in said base region at an interface between saidfirst semiconductor layer and said insulating layer.
 2. The bipolartransistor of claim 1 wherein a portion of said base is a doped to forman extrinsic base.
 3. The bipolar transistor of claim 2 wherein theextrinsic base, the emitter, the extrinsic collector and the exposedsurfaces of the conductive back electrode each include a silicide. 4.The bipolar transistor of claim 3 wherein the silicide is in contactwith a metal contact that is located atop the silicide inside a contactopening formed in an interconnect dielectric.
 5. The bipolar transistorof claim 1 wherein the emitter comprises a single-finger.
 6. The bipolartransistor of claim 1 wherein the emitter comprises multi-fingers. 7.The bipolar transistor of claim 2 wherein the extrinsic collector andthe extrinsic base are raised regions.
 8. The bipolar transistor ofclaim 1 wherein a spacer is located on sidewalls of the emitter.
 9. Thebipolar transistor of claim 1 wherein said insulating layer is a thininsulating layer having a thickness from about 1 to about 15 nm.
 10. Thebipolar transistor of claim 9 wherein another insulating layer that isthicker than the thin insulating layer is located adjacent thereto, saidanother insulating layer is a buried oxide of a silicon-on-insulator.11. The bipolar transistor of claim 2 wherein the base contains a p-typedopant, the emitter contains an n-type dopant, the extrinsic collectorcontains an n-type dopant and the extrinsic base contains a p-typedopant.
 12. The bipolar transistor of claim 2 wherein the extrinsic basediffuses minimally into the base so as not to be in contact with theunderlying insulating layer.
 13. An integrated semiconductor structurecomprising a bipolar transistor comprising a conductive back electrodefor receiving a bias voltage; an insulating layer located over saidconductive back electrode; a first semiconductor layer located over saidinsulating layer, said first semiconductor layer comprising a base whichincludes a first conductive type dopant and an extrinsic collector whichincludes a second conductivity type dopant, said extrinsic collectorborders said base; and an emitter comprising a second semiconductorlayer of the second conductivity type dopant located over a portion ofsaid base region, wherein said conductive back electrode is biased toform an inversion charge layer in said base region at an interfacebetween said first semiconductor layer and said insulating layer; and atleast one adjacent complementary metal oxide semiconductor device, saidbipolar transistor and said at least one adjacent complementary metaloxide semiconductor device are separated by an isolation region.
 14. Theintegrated semiconductor structure of claim 13 wherein the complementarymetal oxide semiconductor device is a field effect transistor.
 15. Amethod of fabricating a bipolar transistor comprising the steps of:providing a silicon-on-insulator (SOI) substrate comprising a firstsemiconductor layer located over a first insulating layer, wherein aportion of the first insulating layer beneath said first semiconductorlayer is removed providing an undercut region; forming a secondinsulating layer on exposed surfaces of said first semiconductor layer,wherein said second insulating layer is thinner than said firstinsulating layer; filling the undercut region and the removed portion ofthe first semiconductor layer with a conductive back electrode material;forming an extrinsic base containing a first conductivity dopant and anextrinsic collector containing a second conductivity type dopant inportions of the first semiconductor layer; forming an emitter comprisinga second semiconductor layer including said second conductivity typedopant over a portion of said first semiconductor layer; and biasing theconductive back electrode material to form an inversion charge layer atan interface between the first semiconductor layer and the secondinsulating layer.
 16. The method of claim 15 wherein said providing theSOI substrate comprises forming a trench into the first semiconductorlayer, stopping on said first insulating layer; and performing anisotropic etch process to form said undercut region.
 17. The method ofclaim 15 wherein said forming the second insulating layer comprises athermal growth process.
 18. The method of claim 15 wherein said fillingthe undercut region comprises depositing a doped polysilicon layer. 19.The method of claim 15 wherein said extrinsic collector is formed byforming a patterned mask on at least a portion of the firstsemiconductor layer and ion implanting into exposed portions of thefirst semiconductor layer, and said extrinsic base is formed by forminga patterned mask on at least a portion of the first semiconductor layerand ion implanting into exposed portions of the first semiconductorlayer.
 20. The method of claim 15 wherein the extrinsic base contains ap-type dopant and the extrinsic collector contains an n-type dopant,wherein the dopants are introduced via separate ion implantationprocesses.
 21. The method of claim 15 wherein the forming the emitterincludes the step of forming a dummy emitter on the first semiconductorlayer, forming spacers about the dummy emitter, forming an etch stoplayer and a planarizing material, planarizing the planarizing materialto expose a surface of the etch stop layer atop the dummy emitter,removing the exposed etch stop layer, removing at least the dummyemitter providing an emitter opening that exposes the firstsemiconductor and depositing said second semiconductor layer to fillsaid emitter opening.
 22. The method of claim 21 further comprisingforming a hardmask on the second semiconductor layer and patterning thehardmask and the second semiconductor layer.
 23. The method of claim 22further comprising etching back at least said planarizing material, saidhardmask and said etch stop layer exposing said emitter and surfaces ofsaid first semiconductor layer wherein said extrinsic collector andextrinsic base are located.
 24. The method of claim 23 furthercomprising forming a silicide on at least said emitter, said extrinsiccollector and said extrinsic base utilizing a silicidation process. 25.The method of claim 24 further comprising forming an interconnectdielectric having a contact opening that exposes said silicide; andfilling said contact opening with a contact metal.
 26. The method ofclaim 15 wherein said biasing is performed using an external source. 27.The method of claim 15 further comprising forming spacers about saidemitter, said spacers being formed prior to emitter formation using adummy emitter process.
 28. The method of claim 15 further comprisingforming trench isolation regions on top of portions of said firstinsulating layer.
 29. The method of claim 15 wherein the extrinsic baseis formed with minimal diffusion of said dopant thereby said extrinsicbase is not in contact with said second insulating layer.
 30. The methodof claim 15 further comprising forming raised extrinsic collector andextrinsic base regions.
 31. The method of claim 15 wherein the undercutregion is provided by an isotropic etching process in which no padlayers are present on said first semiconductor layer.